Method for fabricating fin field effect transistors

ABSTRACT

A method of fabricating a Fin field effect transistor (FinFET) includes providing a substrate having a first fin and a second fin extending above a substrate top surface, wherein the first fin has a top surface and sidewalls and the second fin has a top surface and sidewalls. The method includes forming an insulation layer between the first and second fins. The method includes forming a first gate dielectric having a first thickness covering the top surface and sidewalls of the first fin using a plasma doping process. The method includes forming a second gate dielectric covering the top surface and sidewalls of the second fin having a second thickness less than the first thickness. The method includes forming a conductive gate strip traversing over both the first gate dielectric and the second gate dielectric.

PRIORITY CLAIM

The present application is a continuation of Ser. No. 14/605,540, filedJan. 26, 2015, issuing as U.S. Pat. No. 9,257,343 on Feb. 9, 2016, whichis a divisional of U.S. application Ser. No. 13/293,732, filed Nov. 10,2011, each of which are incorporated herein by reference in theirentirety.

FIELD OF THE INVENTION

This disclosure relates to integrated circuit fabrication, and moreparticularly to a fin field effect transistor.

BACKGROUND

As the semiconductor industry has progressed into nanometer technologyprocess nodes in pursuit of higher device density, higher performance,and lower costs, challenges from both fabrication and design issues haveresulted in the development of three-dimensional designs, such as a finfield effect transistor (FinFET). A typical FinFET is fabricated with athin vertical fin” (or fin structure) extending from a substrate, forexample, etched into a silicon layer of the substrate. The channel ofthe FinFET is formed in this vertical fin. A gate is provided over threesides (e.g., wrapping) the fin. Having a gate on both sides of thechannel allows gate control of the channel from both sides. In addition,strained materials in recessed source/drain (S/D) portions of the FinFETutilizing selectively grown silicon germanium (SiGe) may be used toenhance carrier mobility.

However, there are challenges to implement such features and processesin complementary metal-oxide-semiconductor (CMOS) fabrication. Forexample, it is difficult to achieve a flexible circuit design using aFinFET because the FinFET is formed of a plurality of identical fins forfeasible FinFET fabrication.

Accordingly, what are needed are an improved FinFET structure and amethod of fabricating the FinFET.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 is a flowchart of a method of fabricating a FinFET according tovarious embodiments of the present disclosure; and

FIGS. 2-10B are schematic cross-sectional views of a FinFET at variousstages of fabrication according to various embodiments of the presentdisclosure.

DESCRIPTION

It is understood that the following disclosure provides many differentembodiments, or examples, for implementing different features of theinvention. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Forexample, the formation of a first feature over or on a second feature inthe description that follows may include embodiments in which the firstand second features are formed in direct contact, and may also includeembodiments in which additional features may be formed between the firstand second features, such that the first and second features may are notin direct contact. In addition, the present disclosure may repeatreference numerals and/or letters in the various examples.

Referring to FIG. 1, illustrated is a flowchart of a method 100 offabricating a Fin field effect transistor (FinFET) according to variousembodiments of the present disclosure. The method 100 begins with step102 in which a substrate having a first fin and a second fin extendingabove a substrate top surface is provided, wherein each of the fins hasa top surface and sidewalls. The method 100 continues with step 104 inwhich an insulation layer is formed between the first and second finsextending part way up the fins from the substrate top surface. Themethod 100 continues with step 106 in which a photo-sensitive layer isformed over three surfaces (i.e. wraps) the first and second fins. Themethod 100 continues with step 108 in which the photo-sensitive layer ispatterned to expose the portion of the first fin above the insulationlayer while maintaining coverage of the second fin. The method 100continues with step 110 in which a first gate dielectric having a firstthickness is formed covering the top surface and sidewalls (i.e. wraps)of the first fin using a plasma doping process. The method 100 continueswith step 112 in which the photo-sensitive layer is removed. The method100 continues with step 114 in which a second gate dielectric is formedcovering the top surface and sidewalls (i.e. wraps) of the second finhaving a second thickness less than the first thickness. The method 100continues with step 116 in which a conductive gate strip is formedtraversing over both the first gate dielectric and second gatedielectric. The discussion that follows illustrates an embodiment of amethod in accordance with FIG. 1.

FIGS. 2-10B are schematic cross-sectional views of a FinFET 200 atvarious stages of fabrication according to various embodiments of thepresent disclosure. As employed in the present disclosure, the FinFET200 refers to any fin-based, multi-gate transistor. The FinFET 200 maybe included in a microprocessor, memory cell, and/or other integratedcircuit (IC). It is noted that the method of FIG. 1 does not produce acompleted FinFET 200. A completed FinFET 200 may be fabricated usingcomplementary metal-oxide-semiconductor (CMOS) technology processing.Accordingly, it is understood that additional processes may be providedbefore, during, and after the method 100 of FIG. 1, and that some otherprocesses may only be briefly described herein. Also, FIGS. 1 through10B are simplified for a better understanding of the present disclosure.For example, although the figures illustrate the FinFET 200, it isunderstood the IC may comprise a number of other devices comprisingresistors, capacitors, inductors, fuses and/or other devices known inthe art.

Referring to FIG. 2, a substrate 202 is provided. In one embodiment, thesubstrate 202 comprises a crystalline silicon substrate (e.g., wafer).The substrate 202 may comprise various doped regions depending on designrequirements (e.g., p-type substrate or n-type substrate). In someembodiments, the doped regions may be doped with p-type or n-typedopants. For example, the doped regions may be doped with p-typedopants, such as boron or BF₂; n-type dopants, such as phosphorus orarsenic; and/or combinations thereof. The doped regions may beconfigured for an n-type FinFET, or alternatively configured for ap-type FinFET.

The substrate 202 may alternatively comprise some other suitableelemental semiconductor, such as diamond or germanium; a suitablecompound semiconductor, such as gallium arsenide, silicon carbide,indium arsenide, or indium phosphide; or a suitable alloy semiconductor,such as silicon germanium carbide, gallium arsenic phosphide, or galliumindium phosphide. Further, the substrate 202 may comprise an epitaxiallayer (epi-layer), may be strained for performance enhancement, and/ormay comprise a silicon-on-insulator (SOI) structure.

The fins extending above a substrate top surface are formed afteretching into the substrate 202, wherein each of the fins has a topsurface and sidewalls. In some embodiments, a pad layer 204 a and a masklayer 204 b are formed on the semiconductor substrate 202. The pad layer204 a may be a thin film comprising silicon oxide formed, for example,using a thermal oxidation process. The pad layer 204 a may act as anadhesion layer between the semiconductor substrate 202 and mask layer204 b. The pad layer 204 a may also act as an etch stop layer foretching the mask layer 204 b. In some embodiments, the mask layer 204 bis formed of silicon nitride, for example, using low-pressure chemicalvapor deposition (LPCVD) or plasma enhanced chemical vapor deposition(PECVD). The mask layer 204 b can be used as a hard mask duringsubsequent photolithography processes. A photo-sensitive layer 206 isformed on the mask layer 204 b and is then patterned, forming openings208 in the photo-sensitive layer 206.

Referring to FIG. 3, the mask layer 204 b and pad layer 204 a are etchedthrough openings 208, exposing the underlying semiconductor substrate202. The exposed semiconductor substrate 202 is then etched to formtrenches 210 with a substrate top surface 202 s. Portions of thesemiconductor substrate 202 between trenches 210 form a plurality ofidentical semiconductor fins. In some embodiments, the plurality of theidentical semiconductor fins comprise first fin 212_1 and second fin212_2. In alternative embodiments, the plurality of the identicalsemiconductor fins comprise first fin 212_1, second fin 212_2, and thirdfin 212_3. Trenches 210 may be strips (in the top view) parallel to eachother, and closely located from each other. For example, the spacing Sbetween trenches 210 may be smaller than about 30 nm. In someembodiments, the spacing S between trenches 210 may be between about 30nm and about 15 nm. In other embodiments, the spacing S between trenches210 may be between about 15 nm and about 2 nm. The photo-sensitive layer206 is then removed. Next, a cleaning may be performed to remove anative oxide of the semiconductor substrate 202. The cleaning may beperformed using diluted hydrofluoric (DHF) acid.

Depth D of the trenches 210 may be between about 2100 Å and about 2500Å, while width W of the trenches 210 is between about 300 Å and about1500 Å. In some embodiments, the aspect ratio (D/W) of the trenches 210is greater than about 7.0. In other embodiments, the aspect ratio may begreater than about 8.0, although the aspect ratio may also be lower thanabout 7.0, or between 7.0 and 8.0. One skilled in the art will realize,however, that the dimensions and values recited throughout thisdescription are merely examples, and may be changed to suit differentscales of integrated circuits.

An insulation layer may be formed between the fins extending part way upthe fins from the substrate top surface 202 s to isolate the fins fromeach other. In some embodiments, liner oxide (not shown) is optionallyformed in the trenches 210. In some embodiments, liner oxide may be athermal oxide having a thickness between about 20 Å to about 500 Å. Inother embodiments, liner oxide may be formed using in-situ steamgeneration (ISSG) and the like. The formation of liner oxide roundscorners of the trenches 210, which reduces the electrical fields, andhence improves the performance of the resulting integrated circuit (IC).

In some embodiments, the trenches 210 are then filled with a dielectricmaterial 216. FIG. 4 shows the resulting structure after the depositionof the dielectric material 216. The dielectric material 216 may comprisesilicon oxide, although other dielectric materials, such as siliconnitride, silicon oxynitride, fluoride-doped silicate glass (FSG), or alow-K dielectric material, may also be used. In some embodiments, thedielectric material 216 may be formed using a high-density-plasma (HDP)CVD process, using silane (SiH₄) and oxygen (O₂) as reacting precursors.In other embodiments, the dielectric material 216 may be formed using asub-atmospheric CVD (SACVD) process or high aspect-ratio process (HARP),wherein process gases may comprise tetraethylorthosilicate (TEOS) andozone (O₃). In yet other embodiments, the dielectric material 216 may beformed using a spin-on-dielectric (SOD) process, such as hydrogensilsesquioxane (HSQ) or methyl silsesquioxane (MSQ).

In some embodiments, a chemical mechanical polish (CMP) is thenperformed, followed by the removal of the mask layer 204 b and pad layer204 a, producing the structure shown in FIG. 5. The remaining portionsof the dielectric material 216 in the trenches 210 are hereinafterreferred to as an insulation layer 217 The mask layer 204 b, if formedof silicon nitride, may be removed using a wet process using hot H₃PO₄,while pad layer 204 a may be removed using diluted HF acid, if formed ofsilicon oxide. In alternative embodiments, the removal of the mask layer204 b and pad layer 204 a may be performed after the recessing of theinsulation layer 217, which recessing step is shown in FIG. 6.

As shown in FIG. 6, the insulation layer 217 is recessed by an etchingstep, resulting in recesses 214 to form a plurality of upper portions(denoted as 222_1, 222_2, and 222_3) of the plurality of semiconductorfins (denoted as 212_1, 212_2, and 212_3). In some embodiments, theremaining insulation layer 217 may comprise a first insulation layer217_1 to isolate the first fin 212_1 and the second fin 212_2 and asecond insulation layer 217_2 to isolate the first fin 212_1 and thethird fin 212_3. In some embodiments, the etching step may be performedusing a wet etching process, for example, by dipping the FinFET 200 inhydrofluoric acid (HF). In other embodiments, the etching step may beperformed using a dry etching process, for example, the dry etchingprocess may be performed using CHF₃ or BF₃ as etching gases.

In some embodiments, the remaining insulation layer 217 comprises flattop surfaces 217 t. In other embodiments, the remaining insulation layer217 comprises curved top surfaces (nor shown). Further, the plurality ofthe upper portions of the plurality of semiconductor fins protrudingover the flat top surfaces 217 t of the remaining insulation layer 217are used to form channel regions of the FinFETs 200. In other words, theremaining insulation layer 217_1 between the first fin 212_1 and thesecond fin 212_2 extending part way up the fins 212_1, 212_2 from thesubstrate top surface 202 s. The remaining insulation layer 217_2between the first fin 212_1 and the third fin 212_3 extending part wayup the fins 212_1, 212_3 from the substrate top surface 202 s. In thesome embodiments, each of the plurality of the upper portions of theplurality of the semiconductor fins comprise a top surface (denoted as222 t_1, 222 t_2, and 222 t_3) and sidewalls (denoted as 222 s_1, 222s_2, and 222 s_3). Height H of the upper portions of the semiconductorfins may be between 15 nm and about 50 nm, although the height may alsobe greater or smaller.

In some embodiments, the process steps up to this point have providedthe substrate 202 having the first fin 212_1 and second fin 212_2extending above the substrate top surface 202 s, wherein each of thefins 212_1, 212_2 has the top surface 222 t_1, 222 t_2 and sidewalls 222s_1, 222 s_2, wherein the insulation layer 217 between the first andsecond fins 212_1, 212_2 extending part way up the fins 212_1, 212_2from the substrate top surface 202 s. Then, a conductive gate strip isformed to cover the top surfaces 222 t_1, 222 t_2 and sidewalls 222 s_1,222 s_2 of the plurality of fins 212_1, 212_2 to establish an electricalconnection between the fins 212_1, 212_2 to form a FinFET. It should benoted that the FinFET formed of a plurality of identical fins isfeasible for FinFET manufacturing, but may provide excessive on-currentif the FinFET comprises more fins than needed, thereby decreasing aflexible circuit design while using the FinFET.

Accordingly, the processing discussed below with reference to FIGS.7-10B may form a thinner gate dielectric on a selected fin to enablechannel regions of the selected fin of a FinFET, but form a thicker gatedielectric on an un-selected fin to disable channel regions of theun-selected fin of the FinFET. The processing helps avoid problemsassociated with excessive on-current of a FinFET, thereby increasingFinFET circuit design flexibility.

Referring to FIG. 7, a photo-sensitive layer 218 is formed over thefirst fin 212_1 and the second fin 212_2 by a suitable process, such asspin-on coating. In some embodiments, the photo-sensitive layer 218 ispatterned to expose the portion of the first fin 212_1 above theinsulation layer 217 and cover the second fin 212_2.

FIG. 8A shows the FinFET 200 of FIG. 7 after a first gate dielectric 224a is formed covering the top surface 222 t_1 x and sidewalls 222 s_1 xof the first fin 212_1. The step of forming the first gate dielectric224 a is performed using a plasma doping process 220, so as to avoiddamage of the photo-sensitive layer 218. FIG. 8B shows the FinFET 200 ofFIG. 7 after a first gate dielectric 224 b is formed covering the topsurface 222 t_1 y of the first fin 212_1. The step of forming the firstgate dielectric 224 b is performed using a plasma doping process 220, soas to avoid damage of the photo-sensitive layer 218. In someembodiments, the plasma doping process 220 comprises anoxygen-containing plasma doping process. For example, the step of theplasma doping process 220 is performed under a power of about 260 to2500 W, a bias voltage of about −200V to −20 kV, and a pressure of about1 to 50 mTorr, using O₂, O₃, or H₂O as doping gases. Then, thephoto-sensitive layer 218 is removed.

It should be noted that a bias voltage used in the plasma doping process220 may be tuned to allow better control of a thickness of the firstgate dielectric 224 a or 224 b to achieve desired profiles for theoxidation of the first fin 212_1. For example, the plasma doping processdirectly uses the plasma ions that flow into the reaction chamber toreact, whereby forming a reacted boundary layer on the exposed surfaceof the fin, and the boundary layer will be changed in accordance withthe variation of the dopant concentration.

On the contrary, the concept for pulsed plasma doping is using the gasflow into the reaction chamber with intermittent voltage methodcontrolled by add/non-add voltage, so as to separate positive ions fromthe gas. Then the positive ions move forward to the fin surface so theboundary layer is uniform and steady-state. Accordingly, the drivingforce can be controlled to keep constant.

In some embodiments, the first gate dielectric 224 a or 224 b isannealed after the plasma doping process 220. In alternativeembodiments, the first gate dielectric 224 a or 224 b is annealed afterformation of a second gate dielectric 234 (shown in FIGS. 9A and 9B). Inother word, the first gate dielectric 224 a or 224 b and the second gatedielectric 234 may be simultaneously annealed after forming the secondgate dielectric 234.

If the plasma doping drives the oxygen too close to the surface of thefirst fin 212_1, an outer portion of the upper portion of the first fin212_1 is partially consumed due to reaction with the plasma ions to forma first gate dielectric 224 a, while the upper portion of the second fin212_2 is protected by the photo-sensitive layer 218 (shown in FIG. 8A).Thus, the first gate dielectric 224 a covers a top surface 222 t_1 x andsidewalls 222 s_1 x of the remaining upper portion 222_1 x of the firstfin 212_1. In some embodiments, the top surface 222 t_1 x of the firstfin 212_1 is lower than the top surface 222 t_2 of the second fin 212_2.In other embodiments, the top surface 217 t of the insulation layer 217is lower than the top surface 222 t_1 x of the first fin 212_1. In stillother embodiments, the upper portion 222_1 x of the first fin 212_1extending above the insulation layer 217 is thinner than the upperportion of the second fin 212_2 extending above the insulation layer217.

If the plasma doping drives the oxygen too close to the center of thefirst fin 212_1, material of the first fin 212_1 above the top surface217 t of the insulation layer 217 may be fully consumed due to reactionwith the plasma ions to form a first gate dielectric 224 b (shown inFIG. 8B). In other words, the top surface 217 t of the insulation layer217 is substantially coplanar with the top surface 222 t_1 y of thefirst fin 212_1. In some embodiments, the top surface 222 t_1 y of thefirst fin 212_1 is lower than the top surface 222 t_2 of the second fin212_2. Since operation of the FinFET does not turn on the first fin212_1 (un-selected fin), additional material consumption of the firstfin 212_1 under top surface of the insulation layer 217 is allowable.

In some embodiments, a ratio of a width W₁ of a portion of the first fin212_1 extending above the insulation layer 217 to a width W₂ of aportion of the second fin 212_2 extending above the insulation layer 217is from 0 to 0.95. In some embodiments, a ratio of a height h₁ of thefirst fin 212_1 above the insulation layer 217 to a height h₂ of thesecond fin 212_2 above the insulation layer 217 is from 0 to 0.95.

Referring to FIGS. 9A and 9B, after the first gate dielectric 224 a or224 b formation process and removal of the photo sensitive layer 218, asecond gate dielectric 234 is formed covering the top surface 222 t_2and sidewalls 222 s_2 of the second fin 212_2 and the first gatedielectric 224 a or 224 b. In some embodiments, the second gatedielectric 234 comprises silicon oxide, silicon nitride, siliconoxy-nitride, or high-k dielectrics. High-k dielectrics comprise metaloxides. Examples of metal oxides used for high-k dielectrics includeoxides of Li, Be, Mg, Ca, Sr, Sc, Y, Zr, Hf, Al, La, Ce, Pr, Nd, Sm, Eu,Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and mixtures thereof. The second gatedielectric 234 may be formed using a suitable process such as atomiclayer deposition (ALD), chemical vapor deposition (CVD), physical vapordeposition (PVD), thermal oxidation, UV-ozone oxidation, or combinationsthereof. The second gate dielectric 234 may further comprise aninterfacial layer (not shown) to reduce damage between the second gatedielectric 234 and the second fin 212_2. The interfacial layer comprisessilicon oxide.

In some embodiments, the second gate dielectric 234 is a high-kdielectric layer with a second thickness t₂ in the range of about 10 Åto about 30 Å. Structurally, the first gate dielectric 224 a or 224 band a portion of the second gate dielectric 234 covering the first gatedielectric 224 a or 224 b are combined and hereafter referred to as acombined gate dielectric 225. Therefore, a first thickness t₁ of thecombined gate dielectric 225 is summation of the thickness t_(x), of thefirst gate dielectric 224 a or 224 b and the second thickness t₂ of thesecond gate dielectric 234. In other words, a combined gate dielectric225 covering the top surface 222 t_1 x or 222 t_1 y of the first fin212_1 has a first thickness t₁ and a second gate dielectric 234 coveringthe top surface 222 t_2 and sidewalls 222 s_2 of the second fin 212_2has a second thickness t₂ less than the first thickness t₁. In someembodiments, a ratio of the first thickness t₁ to the second thicknesst₂ is from 1.05 to 2.

Referring to FIGS. 10A and 10B, after the second gate dielectric 234formation process, a conductive gate strip 226 is then formed traversingover both the first gate dielectric 224 a or 224 b and second gatedielectric 234. In some embodiments, the conductive gate strip 226covers more than one semiconductor fin 212_1, 212_2, so that theresulting FinFET 200 comprises more than one fin. In some embodiments,the conductive gate strip 226 comprises a single layer or multilayerstructure. In some embodiments, the conductive gate strip 226 comprisespoly-silicon. Further, the conductive gate strip 226 may be dopedpoly-silicon with the uniform or non-uniform doping. Alternatively, theconductive gate strip 226 comprises an N-work function metal, whereinthe transistor is an n-type FinFET, wherein the N-work-function metalcomprises a metal selected from a group of Ti, Ag, Al, TiAl, TiAlN, TaC,TaCN, TaSiN, Mn, and Zr. Alternatively, the conductive gate strip 226comprises a P-work function metal, wherein the transistor is a p-typeFinFET, wherein the P-work-function metal comprises a metal selectedfrom a group of TiN, WN, TaN, and Ru. In some embodiments, theconductive gate strip 226 comprises a thickness in the range of about 30nm to about 60 nm. The conductive gate strip 226 may be formed using asuitable process such as ALD, CVD, PVD, plating, or combinationsthereof.

In some embodiments, a Fin field effect transistor (FinFET) 200comprises a substrate 202 comprising a top surface 202 s; a first fin212_1 and a second fin 212_2 extending above the substrate top surface202 s, wherein each of the fins 212_1, 212_2 has a top surface andsidewalls; an insulation layer 217 between the first fine 212_1 andsecond fin 212_2 extending part way up the fins 212_1, 212_2 from thesubstrate top surface 202 s; a combined gate dielectric 224 covering thetop surface 222 t_1 x and sidewalls 222 s_1 x of the first fin 212_1having a first thickness t₁ and a second gate dielectric 234 coveringthe top surface 222 t_2 and sidewalls 222 s_2 of the second fin 212_2having a second thickness t₂ less than the first thickness t₁; and aconductive gate strip 226 traversing over both the first gate dielectric224 a or 224 b and second gate dielectric 234. Accordingly, Applicant'smethod of fabricating a FinFET 200 may fabricate a FinFET operated whileturning on the selected fin (the second fin) with thinner gatedielectric and not turning on the un-selected fin (the first fin) withthicker gate dielectric, thereby increasing a flexible circuit design.

It is understood that the FinFET 200 may undergo further CMOS processesto form various features such as source/drain, contacts/vias,interconnect metal layers, dielectric layers, passivation layers andother features known in the art.

One aspect of this description relates to a method of fabricating a Finfield effect transistor (FinFET). The method includes providing asubstrate having a first fin and a second fin extending above asubstrate top surface, wherein the first fin has a top surface andsidewalls and the second fin has a top surface and sidewalls. The methodfurther includes forming an insulation layer between the first andsecond fins extending part way up the fins from the substrate topsurface. The method further includes forming a photo-sensitive layerover the first and second fins. The method further includes patterningthe photo-sensitive layer to expose the portion of the first fin abovethe insulation layer and cover the second fin. The method furtherincludes forming a first gate dielectric having a first thicknesscovering the top surface and sidewalls of the first fin using a plasmadoping process. The method further includes removing the photo-sensitivelayer. The method further includes forming a second gate dielectriccovering the top surface and sidewalls of the second fin having a secondthickness less than the first thickness. The method further includesforming a conductive gate strip traversing over both the first gatedielectric and the second gate dielectric.

Another aspect of this description relates to a method of manufacturinga Fin field effect transistor (FinFET). The method includes recessing asubstrate to form a first fin and a second fin extending above arecessed surface of the substrate, wherein the first fin has a topsurface and sidewalls and the second fin has a top surface andsidewalls. The method further includes filling at least a portion of aspace between the first fin and the second fin with an insulation layer.The method further includes forming a first gate dielectric covering thetop surface and sidewalls of the first fin, wherein the first gatedielectric has a first thickness, and the first gate dielectric is indirect contact with the first fin. The method further includes forming asecond gate dielectric covering the top surface and sidewalls of thesecond fin, wherein the second gate dielectric has a second thicknessless than the first thickness, and the second gate dielectric is indirect contact with the second fin. The method further includes forminga conductive gate strip traversing over both the first gate dielectricand the second gate dielectric.

Still another aspect of this description relates to a method ofmanufacturing a Fin field effect transistor (FinFET). The methodincludes forming a first fin extending above a top surface of asubstrate. The method further includes forming a second fin extendingabove the top surface of the substrate. The method further includesforming an insulation layer between the first fin and the second fin.The method further includes performing a plasma doping process on thefirst fin to form a first gate dielectric over a top surface of thefirst fin, wherein the plasma doping process consumes a portion of thefirst fin, and the first gate dielectric has a first thickness over thetop surface of the first fin. The method further includes forming asecond gate dielectric over the top surface and sidewalls of the secondfin, wherein the second gate dielectric has a second thickness less thanthe first thickness. The method further includes forming a conductivegate strip traversing over both the first gate dielectric and the secondgate dielectric.

While the invention has been described by way of example and in terms ofembodiments, it is to be understood that the invention is not limited tothe disclosed embodiments. To the contrary, it is intended to covervarious modifications and similar arrangements (as would be apparent tothose skilled in the art). Therefore, the scope of the appended claimsshould be accorded the broadest interpretation so as to encompass allsuch modifications and similar arrangements.

1.-20. (canceled)
 21. A method of fabricating a Fin field effect transistor (FinFET), the method comprising: providing a substrate having a first fin and a second fin extending above a substrate top surface and an insulation layer between the first and second fins extending part way up the first and second fins from the substrate top surface; forming a first gate dielectric having a first thickness using a plasma doping process directed to the first fin; forming a second gate dielectric on the second fin having a second thickness less than the first thickness; and forming a conductive gate strip traversing over both the first gate dielectric and the second gate dielectric.
 22. The method of claim 21, wherein the plasma doping process consumes an upper portion of the first fin.
 23. The method of claim 22, wherein a portion of the consumed upper portion of the first fin is coplanar with a top surface of the insulation layer interposing the first and second fins.
 24. The method of claim 21, further comprising: forming the first fin and the second fin such that the first fin and the second fin have same dimensions.
 25. The method of claim 21, further comprising: performing an anneal process on the substrate after forming the first gate dielectric and prior to forming the second gate dielectric.
 26. The method of claim 21, further comprising: masking the second fin during the plasma doping process.
 27. The method of claim 21, wherein the providing the substrate having the first fin and the second fin includes providing the first fin having a first width; and wherein the forming the first gate dielectric consumes the first fin to provide the first fin having a second width less than the first width.
 28. The method of claim 21, wherein the forming the second gate dielectric includes depositing the second gate dielectric over the first gate dielectric.
 29. The method of claim 21, wherein the providing the substrate having the first fin and the second fin includes providing the first and second fins having a first height extending above the insulation layer, and wherein the plasma doping process consumes the first fin to provide the first fin having a second height less than the first height.
 30. A method of fabricating a semiconductor device, the method comprising: providing a substrate having a first fin and a second fin and an insulating region extending part way up the first and second fins; performing a plasma doping process on the first fin, wherein the plasma doping process consumes an upper portion of the first fin forming a dielectric region, wherein the upper portion of the first fin is disposed above a top surface of the insulating region; forming a gate dielectric on the second fin; and forming a conductive gate strip traversing over both the dielectric region and the gate dielectric on the second fin.
 31. The method of claim 30, wherein the plasma doping process forms a dielectric region extending from a first lateral sidewall to an opposing second lateral sidewall of the first fin.
 32. The method of claim 30, further comprising: defining the upper portion of the first fin extending from a region of the first fin coplanar with the insulating region to a top surface of the first fin.
 33. The method of claim 30, wherein the forming the gate dielectric includes forming the gate dielectric over the consumed upper portion of the first fin.
 34. The method of claim 30, wherein the forming the gate dielectric on the second fin includes depositing the gate dielectric directly on a sidewall of the second fin.
 35. The method of claim 34, wherein the gate dielectric includes an interfacial layer underlying a second dielectric layer.
 36. The method of claim 35, wherein the forming the gate dielectric includes forming the interfacial layer directly on the sidewall of the second fin; and thereafter depositing the second dielectric layer of high-k material on the interfacial layer.
 37. A method of fabricating a Fin field effect transistor (FinFET), the method comprising: providing a substrate having a first fin and a second fin and an insulating region extending part way up the first and second fins; performing a plasma doping process on the first fin, wherein the plasma doping process consumes an upper portion of the first fin forming a dielectric region, wherein the upper portion of the first fin is disposed above a top surface of the insulating region; and masking the second fin during the performing the plasma doping process.
 38. The method of claim 37, further comprising: forming a dielectric layer over the second fin after the performing the plasma doping process.
 39. The method of claim 37, further comprising: forming a conductive gate strip traversing over both the dielectric region and the second fin.
 40. The method of claim 37, wherein the plasma doping process implants oxygen to form the dielectric layer. 